型号:

IRF6610

RoHS:
制造商:International Rectifier描述:MOSFET N-CH 20V 15A DIRECTFET
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF6610 PDF
标准包装 4,800
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 15A
开态Rds(最大)@ Id, Vgs @ 25° C 6.8 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大) 2.55V @ 250µA
闸电荷(Qg) @ Vgs 17nC @ 4.5V
输入电容 (Ciss) @ Vds 1520pF @ 10V
功率 - 最大 2.2W
安装类型 表面贴装
封装/外壳 DirectFET? 等容 SQ
供应商设备封装 DIRECTFET? SQ
包装 带卷 (TR)
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